1,350 research outputs found
Strong Hall voltage modulation in hybrid ferromagnet/semiconductor microstructures
We present a new magnetoelectronic device consisting of a µm-scale semiconductor cross junction and a patterned, electrically isolated, ferromagnetic overlayer with in-plane magnetization. The large local magnetic field emanating from the edge of the thin ferromagnetic film has a strong perpendicular magnetic component, B[perpendicular](r), which induces a Hall resistance, RH, in the microjunction. External application of a weak in-plane magnetic field reverses the magnetization of the ferromagnet and with it B[perpendicular](r), thus modulating RH. Our data demonstrate that this strong "local" Hall effect is operative at both cryogenic and room temperatures, and is promising for device applications such as field sensors or integrated nonvolatile memory cells
Magnetoelectronic Phenomena at a Ferromagnet-Semiconductor Interface
A Comment on the Letter by P. R. Hammar et al., Phys. Rev. Lett. 83, 203 (1999)
The transfer matrix: a geometrical perspective
We present a comprehensive and self-contained discussion of the use of the
transfer matrix to study propagation in one-dimensional lossless systems,
including a variety of examples, such as superlattices, photonic crystals, and
optical resonators. In all these cases, the transfer matrix has the same
algebraic properties as the Lorentz group in a (2+1)-dimensional spacetime, as
well as the group of unimodular real matrices underlying the structure of the
abcd law, which explains many subtle details. We elaborate on the geometrical
interpretation of the transfer-matrix action as a mapping on the unit disk and
apply a simple trace criterion to classify the systems into three types with
very different geometrical and physical properties. This approach is applied to
some practical examples and, in particular, an alternative framework to deal
with periodic (and quasiperiodic) systems is proposed.Comment: 50 pages, 24 figure
Spin Injection in a Ballistic Two-Dimensional Electron Gas
We explore electrically injected, spin polarized transport in a ballistic
two-dimensional electron gas. We augment the Buettiker-Landauer picture with a
simple, but realistic model for spin-selective contacts to describe multimode
reservoir-to-reservoir transport of ballistic spin 1/2 particles. Clear and
unambiguous signatures of spin transport are established in this regime, for
the simplest measurement configuration that demonstrates them directly. These
new effects originate from spin precession of ballistic carriers; they exhibit
strong dependence upon device geometry and vanish in the diffusive limit. Our
results have important implications for prospective ``spin transistor''
devices.Comment: Submitted to Phys. Rev. Let
Co-ordination between Rashba spin-orbital interaction and space charge effect and enhanced spin injection into semiconductors
We consider the effect of the Rashba spin-orbital interaction and space
charge in a ferromagnet-insulator/semiconductor/insulator-ferromagnet junction
where the spin current is severely affected by the doping, band structure and
charge screening in the semiconductor. In diffusion region, if the the
resistance of the tunneling barriers is comparable to the semiconductor
resistance, the magnetoresistance of this junction can be greatly enhanced
under appropriate doping by the co-ordination between the Rashba effect and
screened Coulomb interaction in the nonequilibrium transport processes within
Hartree approximation.Comment: 4 pages, 3 figure
Quantum Dot as Spin Filter and Spin Memory
We consider a quantum dot in the Coulomb blockade regime weakly coupled to
current leads and show that in the presence of a magnetic field the dot acts as
an efficient spin-filter (at the single-spin level) which produces a
spin-polarized current. Conversely, if the leads are fully spin-polarized the
up or down state of the spin on the dot results in a large sequential or small
cotunneling current, and thus, together with ESR techniques, the setup can be
operated as a single-spin memory.Comment: 4 pages, 3 figures, REVTe
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